A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.
Ammendola, G., Vulpio, M., Bileci, M., Nastasi, N., Gerardi, C., Renna, G., et al. (2002). Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B, 20(5), 2075-2079 [10.1116/1.1508804].
Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
Crupi, Isodiana;
2002-01-01
Abstract
A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.
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