We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

Lombardo, S., Corso, D., Crupi, I., Gerardi, C., Ammendola, G., Melanotte, M., et al. (2004). Multi-bit storage through Si nanocrystals embedded in SiO2. MICROELECTRONIC ENGINEERING, 72(1-4), 411-414 [10.1016/j.mee.2004.01.023].

Multi-bit storage through Si nanocrystals embedded in SiO2

Crupi, Isodiana;
2004-01-01

Abstract

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.
2004
Settore ING-INF/01 - Elettronica
Lombardo, S., Corso, D., Crupi, I., Gerardi, C., Ammendola, G., Melanotte, M., et al. (2004). Multi-bit storage through Si nanocrystals embedded in SiO2. MICROELECTRONIC ENGINEERING, 72(1-4), 411-414 [10.1016/j.mee.2004.01.023].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/179562
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