We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, compared to experimental data on Δ Vth extrapolated to small gate areas, provide very favorable projections on the scalability of these memories. © 2006 American Institute of Physics.

Puglisi, R., Lombardo, S., Corso, D., Crupi, I., Nicotra, G., Perniola, L., et al. (2006). Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories. JOURNAL OF APPLIED PHYSICS, 100(8), 086104 [10.1063/1.2359626].

Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

Crupi, Isodiana;
2006

Abstract

We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, compared to experimental data on Δ Vth extrapolated to small gate areas, provide very favorable projections on the scalability of these memories. © 2006 American Institute of Physics.
Settore ING-INF/01 - Elettronica
Settore FIS/03 - Fisica Della Materia
Puglisi, R., Lombardo, S., Corso, D., Crupi, I., Nicotra, G., Perniola, L., et al. (2006). Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories. JOURNAL OF APPLIED PHYSICS, 100(8), 086104 [10.1063/1.2359626].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/179534
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