Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of other systems are therefore of interest as potential alternatives to Sn-doped In2O3. Recently, CdO has received considerable attention because of its high intrinsic dopability, which coupled with excellent Hall mobilities gives a high electrical conductivity. In the present study we have explored the structure, electronic, and electrical properties of CdO thin films prepared by a simple metalloorganic chemical vapor deposition route. The techniques employed include X-ray diffraction, atomic force microscopy, photoelectron spectroscopy, optical absorption spectroscopy, and luminescence measurements. Electrical properties were characterized by four-point probe and Hall effect measurements in the temperature range between 80 and 460 K. The electrical measurements demonstrated that the CdO thin films are degenerate semiconductors, with free-electron concentrations of around 7 × 1020 cm-3 provided by native donors. © 2014 American Chemical Society.

Cristaldi, D., Millesi, S., Crupi, I., Impellizzeri, G., Priolo, F., Jacobs, R., et al. (2014). Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration. JOURNAL OF PHYSICAL CHEMISTRY. C, 118(27), 15019-15026 [10.1021/jp5040085].

Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration

crupi, Isodiana;
2014-01-01

Abstract

Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of other systems are therefore of interest as potential alternatives to Sn-doped In2O3. Recently, CdO has received considerable attention because of its high intrinsic dopability, which coupled with excellent Hall mobilities gives a high electrical conductivity. In the present study we have explored the structure, electronic, and electrical properties of CdO thin films prepared by a simple metalloorganic chemical vapor deposition route. The techniques employed include X-ray diffraction, atomic force microscopy, photoelectron spectroscopy, optical absorption spectroscopy, and luminescence measurements. Electrical properties were characterized by four-point probe and Hall effect measurements in the temperature range between 80 and 460 K. The electrical measurements demonstrated that the CdO thin films are degenerate semiconductors, with free-electron concentrations of around 7 × 1020 cm-3 provided by native donors. © 2014 American Chemical Society.
2014
Cristaldi, D., Millesi, S., Crupi, I., Impellizzeri, G., Priolo, F., Jacobs, R., et al. (2014). Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration. JOURNAL OF PHYSICAL CHEMISTRY. C, 118(27), 15019-15026 [10.1021/jp5040085].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/154912
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