Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed. © 2013 AIP Publishing LLC.

Torrisi, V., Ruffino, F., Isgrò, G., Crupi, I., Li Destri, G., Grimaldi, M., et al. (2013). Polymer/metal hybrid multilayers modified Schottky devices. APPLIED PHYSICS LETTERS, 103(19) [10.1063/1.4829532].

Polymer/metal hybrid multilayers modified Schottky devices

crupi, Isodiana;
2013-01-01

Abstract

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed. © 2013 AIP Publishing LLC.
2013
Settore ING-INF/01 - Elettronica
Settore FIS/03 - Fisica Della Materia
Torrisi, V., Ruffino, F., Isgrò, G., Crupi, I., Li Destri, G., Grimaldi, M., et al. (2013). Polymer/metal hybrid multilayers modified Schottky devices. APPLIED PHYSICS LETTERS, 103(19) [10.1063/1.4829532].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/151431
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