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EnglishThe authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak reflectivity of 99.5% and SiO2/Si 3N4 DBRs were used to form high finesse hybrid microcavities. State-of-the-art GaN/Al0.2Ga0.8N QWs emitting at 3.62 eV with a linewidth of 45 meV at 300 K were inserted in these structures. For a 3λ/2 microcavity containing six QWs, the interaction between cavity photons and QW excitons is sufficiently large to reach the strong coupling regime. A polariton luminescence is observed with a vacuum field Rabi splitting of 30 meV at 300 K.
E., F., G., C., R., B., J. F., C., Mosca, M., & AND N., G. (2006). Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity. APPLIED PHYSICS LETTERS, 89(7), 1-3.
| Data di pubblicazione: | 2006 | |
| Titolo: | Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity | |
| Autori: | ||
| Citazione: | E., F., G., C., R., B., J. F., C., Mosca, M., & AND N., G. (2006). Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity. APPLIED PHYSICS LETTERS, 89(7), 1-3. | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.2335404 | |
| Abstract: | The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak reflectivity of 99.5% and SiO2/Si 3N4 DBRs were used to form high finesse hybrid microcavities. State-of-the-art GaN/Al0.2Ga0.8N QWs emitting at 3.62 eV with a linewidth of 45 meV at 300 K were inserted in these structures. For a 3λ/2 microcavity containing six QWs, the interaction between cavity photons and QW excitons is sufficiently large to reach the strong coupling regime. A polariton luminescence is observed with a vacuum field Rabi splitting of 30 meV at 300 K. | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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