We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
PANKRATOV E L, SPAGNOLO B (2005). Optimization of impurity profile for p-n junction in heterostructures. THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS, 46(1), 15-19 [10.1140/epjb/e2005-00233-1].
Optimization of impurity profile for p-n junction in heterostructures
SPAGNOLO, Bernardo
2005-01-01
Abstract
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
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