Electronic devices and methods for reading an output signal and controlling a three-electrode electro-chemical amperometric sensor include an operational amplifier having a non-inverting input adapted to receive a biasing electric potential and an inverting input connectable to a reference electrode of the sensor. The devices further include one or more MOS transistors connected to the operational amplifier, with a first MOS transistor connectable to the collector electrode of the sensor to receive or supply a MOS transistor channel current representative of the cell current generated in the sensor, and a second MOS transistor connectable to a reference voltage by a conductor or a resistor. The resistance is lower than the cell impedance such that the current in the second MOS transistor channel depends on the current in the first MOS transistor channel through a nonlinear gain dependent on the resistor
MAIRA GIOVANNI, OCCHIPINTI LUIGI, PIGNATARO BRUNO GIUSEPPE, VINCIGUERRA VINCENZO (2023)Interface electronic device for reading an output signal and for controlling and conditioning a three-electrodes amperometric sensor. . Brevetto No. 11841340.
Interface electronic device for reading an output signal and for controlling and conditioning a three-electrodes amperometric sensor
MAIRA GIOVANNI;PIGNATARO BRUNO GIUSEPPE;
2023-12-12
Abstract
Electronic devices and methods for reading an output signal and controlling a three-electrode electro-chemical amperometric sensor include an operational amplifier having a non-inverting input adapted to receive a biasing electric potential and an inverting input connectable to a reference electrode of the sensor. The devices further include one or more MOS transistors connected to the operational amplifier, with a first MOS transistor connectable to the collector electrode of the sensor to receive or supply a MOS transistor channel current representative of the cell current generated in the sensor, and a second MOS transistor connectable to a reference voltage by a conductor or a resistor. The resistance is lower than the cell impedance such that the current in the second MOS transistor channel depends on the current in the first MOS transistor channel through a nonlinear gain dependent on the resistorFile | Dimensione | Formato | |
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