Accelerated Analysis of Low-Level Injection Operation for Transistor-Based Oscillating Amplifiers

The problem of the accelerated analysis of oscillating amplifiers is addressed. To achieve both computational efficiency and adequate accuracy also in case of transmission-type, transistor-based, circuit structures, a novel approach is proposed which makes use of a general reduced-order model of the injected oscillator. A perturbation-refined analysis method is thus applied, which permits to derive the first-order exact set of differential equations that describes the system behavior in the fundamental-frequency complex-envelope domain. As illustrated by the RF Meissner driven oscillator example presented, the devised approach achieves the stated goals, and lends itself as a convenient, design-oriented, tool for the fast analysis of steady-state, locking-stability and transient response of this class of nonlinear dynamical circuits.