S NICOLAY, J-F CARLIN, E FELTIN, R BUTTE', MOSCA M, N GRANDJEAN, et al. (2005). AlInN/GaN quantum wells for intersubband transitions. In Proceedings of 6th International Conference on Nitride Semiconductor (ICNS) (pp.Fr-OP7-1-Fr-OP7-1).

AlInN/GaN quantum wells for intersubband transitions

MOSCA, Mauro;
2005-01-01

2005
6th International Conference on Nitride Semiconductor (ICNS)
August 28 - September 2, 2005
2005
1
Bremen - Germany - Book of Abstracts
S NICOLAY, J-F CARLIN, E FELTIN, R BUTTE', MOSCA M, N GRANDJEAN, et al. (2005). AlInN/GaN quantum wells for intersubband transitions. In Proceedings of 6th International Conference on Nitride Semiconductor (ICNS) (pp.Fr-OP7-1-Fr-OP7-1).
Proceedings (atti dei congressi)
S NICOLAY; J-F CARLIN; E FELTIN; R BUTTE'; MOSCA M; N GRANDJEAN; M ILEGEMS; M TCHERNYCHEVA; L NEVOU; F H JULIEN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/4192
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