In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
DONATO, N., CADDEMI, A., CRUPI, G., CALANDRA, E. (2004). Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures. In IEEE Instrumentation and Measurement Technology Conference - IMTC 04 (pp.2208-2211).
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
CALANDRA, Enrico
2004-01-01
Abstract
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
