We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
AGNELLO S, BOSCAINO R, LA MATTINA F, GRANDI S, MAGISTRIS A (2005). Optical Properties and Photosensitivity of Vacuum Synthesized Ge-doped Sol-Gel Amorphous SiO2. In 4th IEEE/LEOS Workshop on Fibres and Optical Passive Components (pp.422-426) [10.1109/WFOPC.2005.1462166].
Optical Properties and Photosensitivity of Vacuum Synthesized Ge-doped Sol-Gel Amorphous SiO2
AGNELLO, Simonpietro;BOSCAINO, Roberto;
2005-01-01
Abstract
We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
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