N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
Marchese N, Solano A, Cazzaniga C, Frost C D, Tomarchio E, Pace C (2017). Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation. In RADECS (European Conference on Radiation and its Effects on Devices and Systems) - 2017. Geneva.
Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
Tomarchio E;
2017-01-01
Abstract
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
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