N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
Marchese, N., Solano, A., Cazzaniga, C., Frost, C.D., Tomarchio, E., Pace, C. (2017). Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation [Cartografia].
Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
Tomarchio E;
2017-01-01
Abstract
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
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