We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.
Vulpio, M., Gerardi, C., Lombardo, S., Ammendola, G., Crupi, I., Rossetti, T., et al. (2002). Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins. In Solid State Phenomena (pp.663-668). Trans Tech Publications Ltd.
Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins
Crupi, Isodiana;
2002-01-01
Abstract
We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.
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