We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
Corso, D., Crupi, I., Ancarani, V., Ammendola, G., Molas, G., Perniola, L., et al. (2003). Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell. In Proceedings of European Solid-State Device Research Conference (pp.91-94). IEEE Computer Society [10.1109/ESSDERC.2003.1256818].
Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell
Crupi, Isodiana;
2003-01-01
Abstract
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
| File | Dimensione | Formato | |
|---|---|---|---|
|
2003 ESSDERC.pdf
Solo gestori archvio
Dimensione
300.08 kB
Formato
Adobe PDF
|
300.08 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
