Non volatile memories based on Si nanocrystals (Si-ncs) offer an important alternative to conventional floating gate devices, for the numerous potential advantages associated with the discrete-trap structures [1]. Isolated Si-ncs can be obtained by chemical vapor deposition (CVD) through a fully compatible CMOS process. So far, the main limitation for scaling the CVD Si-nc memories at sub-90 nm node is related to the expected fluctuation, from bit to bit, in the device threshold voltage (VTH), due to the spread in the sur- face fraction (Rdot) covered with Si dots [2]. The reason is the assumption that the dot position and the relative distance are fully random. It will be shown that the nucleation proc- ess is not purely random and the dot formation evolves with partial self-ordering. The relative dispersion of Rdot is nu- merically evaluated as a function of gate size, for random and partially self-ordered nucleation processes. The result is compared to data on VTH distribution and extrapolated to small gate areas.
S.Lombardo, R.A.Puglisi, I.Crupi, D.Corso, G.Nicotra, L.Perniola, et al. (2004). Distribution of the Threshold Voltage Window in Nanocrystal Memories with Si Dots Formed by Chemical Vapor Deposition: Effect of Partial Self-Ordering. In Proceedings of the IEEE Non-Volatile Semiconductor Memory Workshop.
Distribution of the Threshold Voltage Window in Nanocrystal Memories with Si Dots Formed by Chemical Vapor Deposition: Effect of Partial Self-Ordering
Crupi, Isodiana;
2004-01-01
Abstract
Non volatile memories based on Si nanocrystals (Si-ncs) offer an important alternative to conventional floating gate devices, for the numerous potential advantages associated with the discrete-trap structures [1]. Isolated Si-ncs can be obtained by chemical vapor deposition (CVD) through a fully compatible CMOS process. So far, the main limitation for scaling the CVD Si-nc memories at sub-90 nm node is related to the expected fluctuation, from bit to bit, in the device threshold voltage (VTH), due to the spread in the sur- face fraction (Rdot) covered with Si dots [2]. The reason is the assumption that the dot position and the relative distance are fully random. It will be shown that the nucleation proc- ess is not purely random and the dot formation evolves with partial self-ordering. The relative dispersion of Rdot is nu- merically evaluated as a function of gate size, for random and partially self-ordered nucleation processes. The result is compared to data on VTH distribution and extrapolated to small gate areas.File | Dimensione | Formato | |
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