In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Spitale, E., Corso, D., Crupi, I., Nicotra, G., Lombardo, S., Deleruyelle, D., et al. (2004). Effect of high-k materials in the control dielectric stack of nanocrystal memories. In ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference (pp.161-164).
Effect of high-k materials in the control dielectric stack of nanocrystal memories
Crupi, Isodiana;
2004-01-01
Abstract
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
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