Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), μRaman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. μRaman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.
Piazza, A., Agnello, S., Deretzis, I., La Magna, A., Scuderi, M., Nicotra, G., et al. (2014). Micro-Raman characterization of graphene grown on SiC(000-1). In 2014 IEEE 9th Nanotechnology Materials and Devices Conference, NMDC 2014 (pp.15-18). Institute of Electrical and Electronics Engineers Inc. [10.1109/NMDC.2014.6997410].
Micro-Raman characterization of graphene grown on SiC(000-1)
AGNELLO, Simonpietro;CANNAS, Marco;GELARDI, Franco Mario;
2014-01-01
Abstract
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), μRaman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. μRaman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.
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