Sfoglia per Autore
Effect of oxygen deficiency on the radiation sensitivity of sol-gel Ge-doped amorphous SiO2
2008-01-01 AGNELLO S; ALESSI A; GELARDI FM; BOSCAINO R; PARLATO A; GRANDI S; MAGISTRIS A
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
2008-01-01 ALESSI A; AGNELLO S; GELARDI FM; GRANDI S; MAGISTRIS A; BOSCAINO R
Annealing of radiation induced oxygen deficient point defects in amorphous silicon dioxide: evidence for a distribution of the reaction activation energies
2008-01-01 NUCCIO L; AGNELLO S; BOSCAINO R
Optical absorption band at 5.8 eV associated with the E’_gamma centers in amorphous silicon dioxide: Optical absorption and EPR measurements
2008-01-01 AGNELLO S; BUSCARINO G; GELARDI FM; BOSCAINO R
La Scuola Adotta un Esperimento
2009-01-01 Agliolo Gallitto, A; Agnello, S; Napoli, A; Maggio, A
Comparison of gamma and beta-ray irradiation effects in sol-gel Ge-doped SiO2
2009-01-01 Alessi, A; Agnello, S; Gelardi, FM; Sporea, DG; Oproiu, C; Brichard, B
Concentration growth and thermal stability of gamma-ray induced germanium lone pair center in Ge-doped sol–gel a-SiO2
2009-01-01 Alessi, A; Agnello, S; Gelardi, FM; Parlato, A; Grandi, S
Effects of high pressure thermal treatments in oxygen and helium atmospheres on amorphous silicon dioxide and its radiation hardness
2009-01-01 Nuccio, L; Agnello, S; Boscaino, R; Brichard, B
Polyamorphic transformation induced by electron irradiation in a-SiO2 glass
2009-01-01 Buscarino, G; Agnello, S; Gelardi, FM; Boscaino, R
Variability of the Si–O–Si angle in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy
2009-01-01 Buscarino, G; Vaccaro, G; Agnello, S; Gelardi, FM
Refractive index change dependence on Ge(1) defects in -irradiated Ge-doped silica
2009-01-01 Alessi, A; Agnello, S; Grandi, S; Parlato, A; Gelardi, FM
Room Temperature Instability of E′γ Centers Induced by γ Irradiation in Amorphous SiO2
2009-01-01 MESSINA F; AGNELLO S; CANNAS M; PARLATO A
In situ observation of beta-ray induced UV optical absorption in a-SiO2: Radiation darkening and room temperature recovery
2009-01-01 Agnello, S; Cannas, M; Messina, F; Nuccio, L; Boizot, B
29Si attribution of the 1.3 mT hyperfine structure of the E’_gamma centers in amorphous SiO2
2009-01-01 VACCARO G; AGNELLO S; BUSCARINO G; NUCCIO L; GRANDI S; MUSTARELLI P
Role of H2O in the thermal annealing of the E’_gamma center in amorphous silicon dioxide
2009-01-01 NUCCIO L; AGNELLO S; BOSCAINO R
Structural modifications induced by electron irradiation in SiO2 glass: Local densification measurements
2009-01-01 Buscarino, G; Agnello, S; Gelardi, FM
X-ray irradiation effects on a specific multistep Ge-doped fiber
2010-01-01 Alessi, A; Girard, S; Marcandella, C; Agnello, S; Cannas, M; Boukenter, A; Ouerdane, Y
Modification of Ce oxidation state by thermal treatments in controlled atmosphere of Ce-Ti-Eu doped SiO2 glasses
2010-01-01 Agnello, S; Iovino, G; Boscaino, R; Costa, F
NANO-EMETTITORI NIR A BASE DI SILICE PER APPLICAZIONI IN-VIVO E RELATIVO PROCESSO DI PRODUZIONE
2010-01-01 Agnello, S; Boscaino, R; Cannas, M; Gelardi, FM; Leone, M; Militello, V
Structural properties of the range-II- and range-III order in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy
2010-01-01 Vaccaro, G; Buscarino, G; Agnello, S; Messina, G; Carpanese, M; Gelardi, FM
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