We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.
Adamo, G., Agro', D., Stivala, S., Parisi, A., Curcio, L., Ando', A., et al. (2014). Responsivity measurements of SiC photodiodes. In Proceedings of GE2014.
Responsivity measurements of SiC photodiodes
ADAMO, Gabriele;AGRO', Diego;STIVALA, Salvatore;PARISI, Antonino;CURCIO, Luciano;ANDO', Andrea;TOMASINO, Alessandro;GIACONIA, Giuseppe Costantino;BUSACCA, Alessandro;
2014-01-01
Abstract
We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.
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