We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.
Adamo, G., Agro', D., Stivala, S., Parisi, A., Curcio, L., Ando', A., et al. (2014). Responsivity measurements of SiC Schottky photodiodes. In Atti di Fotonica 2014.
Responsivity measurements of SiC Schottky photodiodes
ADAMO, Gabriele;AGRO', Diego;STIVALA, Salvatore;PARISI, Antonino;CURCIO, Luciano;ANDO', Andrea;TOMASINO, Alessandro;GIACONIA, Giuseppe Costantino;BUSACCA, Alessandro;
2014-01-01
Abstract
We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.
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