We report on the electrical and optical comparison, in the continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type (N-on-P class) and N-type (P-on-N class) substrates respectively.

Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G.C., Busacca, A., et al. (2013). P-on-N and N-on-P silicon photomultipliers: an in-depth analysis in the continuous wave regime. In Atti del GE 2013.

P-on-N and N-on-P silicon photomultipliers: an in-depth analysis in the continuous wave regime

ADAMO, Gabriele;AGRO', Diego;STIVALA, Salvatore;PARISI, Antonino;GIACONIA, Giuseppe Costantino;BUSACCA, Alessandro;
2013-01-01

Abstract

We report on the electrical and optical comparison, in the continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type (N-on-P class) and N-type (P-on-N class) substrates respectively.
Settore ING-INF/01 - Elettronica
Settore ING-INF/02 - Campi Elettromagnetici
20-giu-2013
GE 2013
Udine
19-20-21 giugno 2013
2013
99-100
Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G.C., Busacca, A., et al. (2013). P-on-N and N-on-P silicon photomultipliers: an in-depth analysis in the continuous wave regime. In Atti del GE 2013.
Proceedings (atti dei congressi)
Adamo, G; Agro', D; Stivala, S; Parisi, A; Giaconia, GC; Busacca, A; MAZZILLO, M; SANFILIPPO, D; FALLICA, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/98085
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