The resistive switching behaviour observed in micro scale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio.
Macaluso, R., Mosca, M., Costanza, V., D'Angelo, A., Lullo, G., Caruso, F., et al. (2014). Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition. ELECTRONICS LETTERS, 50(4), 262-263 [10.1049/el.2013.3175].
Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition
MACALUSO, Roberto;MOSCA, Mauro;LULLO, Giuseppe;CARUSO, Fulvio;CALI', Claudio;DI FRANCO, Francesco;SANTAMARIA, Monica;DI QUARTO, Francesco
2014-01-01
Abstract
The resistive switching behaviour observed in micro scale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio.
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