We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G.C., Busacca, A., et al. (2013). Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3718-3725 [10.1109/TED.2013.2282709].

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

ADAMO, Gabriele;AGRO', Diego;STIVALA, Salvatore;PARISI, Antonino;GIACONIA, Giuseppe Costantino;BUSACCA, Alessandro;
2013-01-01

Abstract

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
2013
Settore ING-INF/01 - Elettronica
Settore ING-INF/02 - Campi Elettromagnetici
Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G.C., Busacca, A., et al. (2013). Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3718-3725 [10.1109/TED.2013.2282709].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/84235
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