Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.

Nuccio, L., Willis, M., Schulz, L., Fratini, S., Messina, F., D’Amico, M., et al. (2013). Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors. PHYSICAL REVIEW LETTERS, 110, 216602-1-216602-5 [10.1103/PhysRevLett.110.216602].

Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors

MESSINA, Fabrizio;D'AMICO, Michele;CANNAS, Marco;
2013-01-01

Abstract

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
2013
Settore FIS/01 - Fisica Sperimentale
Nuccio, L., Willis, M., Schulz, L., Fratini, S., Messina, F., D’Amico, M., et al. (2013). Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors. PHYSICAL REVIEW LETTERS, 110, 216602-1-216602-5 [10.1103/PhysRevLett.110.216602].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/76202
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