MOSCA M, S NICOLAY, J-F CARLIN, E FELTIN, R BUTTE', N GRANDJEAN, et al. (2005). Al(In)N/GaN Heterostructures for Intersubband Transitions. In Abstracts of 32nd International Symposium on Compound Semiconductors (ISCS) (pp.We 1.3-We 1.3).

Al(In)N/GaN Heterostructures for Intersubband Transitions

MOSCA, Mauro;
2005-01-01

Settore ING-INF/01 - Elettronica
2005
32nd International Symposium on Compound Semiconductors (ISCS)
September 18-22, 2005
2005
1
Rust - Germany
MOSCA M, S NICOLAY, J-F CARLIN, E FELTIN, R BUTTE', N GRANDJEAN, et al. (2005). Al(In)N/GaN Heterostructures for Intersubband Transitions. In Abstracts of 32nd International Symposium on Compound Semiconductors (ISCS) (pp.We 1.3-We 1.3).
Proceedings (atti dei congressi)
MOSCA M; S NICOLAY; J-F CARLIN; E FELTIN; R BUTTE'; N GRANDJEAN; M ILEGEMS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/29346
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