Thin Nb2O5 anodic films (20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
F DI QUARTO, F LA MANTIA, SANTAMARIA M (2007). Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques. CORROSION SCIENCE, 49, 186-194 [10.1016/j.corsci.2006.05.019].
Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques
DI QUARTO, Francesco;SANTAMARIA, Monica
2007-01-01
Abstract
Thin Nb2O5 anodic films (20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
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