Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
J-Y DUBOZ, N GRANDJEAN, A DUSSAIGNE, MOSCA M, J-L REVERCHON, P G VERLY, et al. (2006). Solar blind AlGaN photodetectors with a very high spectral selectivity. THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS, 33(1), 5-7 [10.1051/epjap:2006002].
Solar blind AlGaN photodetectors with a very high spectral selectivity
MOSCA, Mauro;
2006-01-01
Abstract
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
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