InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metalorganic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut (TM) technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results demonstrate the potential of SiCOI engineered substrates as an alternative to laser lift off for thin film LED fabrication.
J DORSAZ, J-F CARLIN, B FAURE, MOSCA M, P GILET, F LETERTRE, et al. (2006). First InGaN/GaN thin Film LED using SiCOI engineered substrate. In 6th International Conference on Nitride Semiconductors (ICNS-6) (pp.2227-2230) [10.1002/pssc.200565189].
First InGaN/GaN thin Film LED using SiCOI engineered substrate
MOSCA, Mauro;
2006-01-01
Abstract
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metalorganic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut (TM) technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results demonstrate the potential of SiCOI engineered substrates as an alternative to laser lift off for thin film LED fabrication.
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