An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (≤ 14 nm) grown on tantalum in acidic electrolyte. The investigation is carried out by the synergetic use of three techniques: Photocurrent Spectroscopy (PCS), Electrochemical Impedance Spectroscopy (EIS) and Differential Admittance (DA) measurements. PCS is a non destructive optical technique based on the analysis of the electrochemical response (photocurrent or photopotential) of the electrode/electrolyte interface under irradiation with photons of suitable energy. PCS can provide information on the energetic of metal/oxide/electrolyte interfaces (flat band potential determination, conduction and valence band edges location). EIS allows to model the electrochemical behaviour of the oxide/electrolyte interface and DA measurements allow to get information on the tantalum grown in the investigated conditions.
FIGA' V (2007). Physico-Chemical Characterization of Ta2O5 Thin Films/Electrolyte Junctions. In ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007 (pp.1-4) [10.1109/ICTONMW.2007.4446965].
Physico-Chemical Characterization of Ta2O5 Thin Films/Electrolyte Junctions
FIGA', Viviana
2007-01-01
Abstract
An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (≤ 14 nm) grown on tantalum in acidic electrolyte. The investigation is carried out by the synergetic use of three techniques: Photocurrent Spectroscopy (PCS), Electrochemical Impedance Spectroscopy (EIS) and Differential Admittance (DA) measurements. PCS is a non destructive optical technique based on the analysis of the electrochemical response (photocurrent or photopotential) of the electrode/electrolyte interface under irradiation with photons of suitable energy. PCS can provide information on the energetic of metal/oxide/electrolyte interfaces (flat band potential determination, conduction and valence band edges location). EIS allows to model the electrochemical behaviour of the oxide/electrolyte interface and DA measurements allow to get information on the tantalum grown in the investigated conditions.File | Dimensione | Formato | |
---|---|---|---|
ICTON2007.pdf
Solo gestori archvio
Descrizione: pdf
Dimensione
402.15 kB
Formato
Adobe PDF
|
402.15 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.