Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved

M. Mosca, S. Nicolay, E. Feltin, J.‐F. Carlin, R. Butté, M. Ilegems, et al. (2007). Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE, 204(4), 1100-1104 [10.1002/pssa.200622483].

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

M. Mosca;
2007-01-01

Abstract

Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved
2007
Settore ING-INF/01 - Elettronica
M. Mosca, S. Nicolay, E. Feltin, J.‐F. Carlin, R. Butté, M. Ilegems, et al. (2007). Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE, 204(4), 1100-1104 [10.1002/pssa.200622483].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/16482
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