We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL with more than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
S CALVEZ, J-M HOPKINS, A A SMITH, AH CLARK, MACALUSO R, HD SUN, et al. (2004). GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications. JOURNAL OF CRYSTAL GROWTH, 268(3-4), 457-465 [10.1016/j.jcrysgro.2004.04.072].
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications
MACALUSO, Roberto;
2004-01-01
Abstract
We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL with more than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
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